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Observation of Meyer-Neldel rule in amorphous films of Ge1-x Se2 Pbx

M. M. El-Nahass1, H. Abd El-Khalek2, H. M. El-Mallah3 and F. S. Abu-Samaha
 

Abstract

Electrical conductivity was performed on amorphous thin films Ge1-x Se2 Pbx (with x = 0, 0.2, 0.4, 0.6 and 0.8) as a function of temperature in the range 300-450 K. The experimental results indicate that the conduction is through thermally activated process having two conduction mechanisms. In the first region at high-temperature range, the value of σo suggest that the dominant conduction of charge carriers changes from the extended state to the localized states in the band tails at compositionx = .08. The experimental results have also been analyzed using Meyer-Neldel rule. The other one appears in the law temperature region and the conductivity has been analyzed using Mott's variable range hopping conduction. Mott's

parameters were calculated for Ge1-x Se2 Pbx films.






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